Electro-mechanical behaviour of in situ W added MgB2 wire

被引：3
作者：
Kovac, P. [1 ]
Kopera, L. [1 ]
Melisek, T. [1 ]
Husek, I. [1 ]
机构：
[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia
来源：
CRYOGENICS | 2014年 / 60卷
关键词：
Filamentary MgB2 wires; SiC and W additions; Axial tension; Critical currents; Strain tolerance; CURRENTS; DENSITY;
D O I：
10.1016/j.cryogenics.2013.12.007
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
Electromechanical characteristics of filamentary in situ MgB2 wires with no, SiC and W addition have been measured at 4.2 K. It was found that the maximal increase of critical current caused by the compensation of residual stress (pre-compression effect) is ranging from 10% up to approximate to 35%. The increase of critical current and its gradient with strain are affected by the applied addition into filaments. The highest increase of critical current by tension and also improved tolerance to tensile strain were measured for W doped MgB2 wire. Improved electromechanical properties are attributed to the reinforcement of MgB2 filaments by distributed tungsten particles. (C) 2013 Elsevier Ltd. All rights reserved.
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页码：5 / 8
页数：4
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