New method for self-heating estimation using only DC measurements

被引：0
作者：
Mori, C. A. B. [1 ]
Agopian, P. G. D. [1 ,2 ]
Martino, J. A. [1 ]
机构：
[1] Univ Sao Paulo, LSI PSI USP, Sao Paulo, Brazil
[2] Sao Paulo State Univ UNESP, Sao Joao Da Boa Vista, Brazil
来源：
2018 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2018年
基金：
巴西圣保罗研究基金会;
关键词：
Self-heating effect; Silicon-On-Insulator; UTBB; MOSFETS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports a new method for estimating the thermal resistance of a device using the inverse of the transistor efficiency as a function of the power applied to the transistor's channel. The advantages of this new method are the use of DC measurements only and errors smaller than 4% in the estimation of the channel temperature increase due to the SHE when compared to a pulsed method for the UTBB SOI studied in this work.
引用
收藏
页码：149 / 152
页数：4
相关论文
共 34 条
  • [21] A new physics-based self-heating effect model for 4H-SiC MESFETs
    Key Lab., Xidian University, Education Ministry for Wide Band-Gap Semiconductor Materials and Devices, Xían 710071, China
    Chin. Phys., 2008, 12 (4622-4626): : 4622 - 4626
  • [22] Novel extraction method including self-heating and ambient temperature effects for a large-signal model of a HBT
    Park, HM
    Koh, K
    Hong, S
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 41 (06) : 1025 - 1035
  • [23] Determination of fatigue limit of polymeric composites in fully reversed bending loading mode using self-heating effect
    Katunin, Andrzej
    Wachla, Dominik
    JOURNAL OF COMPOSITE MATERIALS, 2019, 53 (01) : 83 - 91
  • [24] Formation of silicon-on-aluminum nitride using ion-cut and theoretical investigation of self-heating effects
    Zhu, M
    Liu, WL
    Song, ZT
    Fu, RKY
    Chu, PK
    Lin, CL
    MATERIALS LETTERS, 2005, 59 (04) : 510 - 513
  • [25] Investigation of Self-Heating Effects in a 10-nm SOI-MOSFET With an Insulator Region Using Electrothermal Modeling
    Nasri, F.
    Echouchene, F.
    Ben Aissa, M. F.
    Graur, I.
    Belmabrouk, H.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (08) : 2410 - 2415
  • [26] A new physical insight into the zero-temperature coefficient with self-heating in silicon-on-insulator fin field-effect transistors
    Banchhor, Shashank
    Chauhan, Nitanshu
    Anand, Bulusu
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (03)
  • [27] Self-Heating Measurement of 14-nm FinFET SOI Transistors Using 2-D Time-Resolved Emission
    Stellari, Franco
    Jenkins, Keith A.
    Weger, Alan J.
    Linder, Barry P.
    Song, Peilin
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (05) : 2016 - 2022
  • [28] Systematic Investigation of Self-Heating Effect on CMOS Logic Transistors From 20 to 5 nm Technology Nodes by Experimental Thermoelectric Measurements and Finite Element Modeling
    Liao, M. -H.
    Hsieh, C. -P.
    Lee, C. -C.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (02) : 646 - 648
  • [29] Fatigue behaviour and S-N curve prediction of additively manufactured Inconel 718 using Self-Heating and Energy-Based methods
    Matusu, Martin
    Roidl, Bastian
    Amann, Simon
    Rosenthal, Jakub
    Zetkova, Ivana
    Zetek, Miroslav
    ENGINEERING FAILURE ANALYSIS, 2025, 174
  • [30] Direct Evaluation of Self-Heating Effects in Bulk and Ultra-Thin BOX SOI MOSFETs Using Four-Terminal Gate Resistance Technique
    Takahashi, Tsunaki
    Matsuki, Takeo
    Shinada, Takahiro
    Inoue, Yasuo
    Uchida, Ken
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2016, 4 (05): : 365 - 373
1234