Investigation on boron-doped CVD samples

被引:10
作者
Piccirillo, C [1 ]
Davies, G
Mainwood, A
Penchina, CM
机构
[1] Kings Coll London, Dept Phys, London WC2R 2LS, England
[2] Univ Massachusetts, Dept Phys, Amherst, MA 01003 USA
关键词
diamond growth and characterisation; infrared; boron; electronic structure;
D O I
10.1016/S0925-9635(01)00633-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The present work reports the investigations of the optical properties of B-doped CVD diamond films as a function of temperature, in the energy range from 500 to 5000 cm(-1) for temperatures between 14 and 620 K. The peaks corresponding to hole internal transitions and to one-phonon transitions were observed. Their intensities decreased as the temperature increased; a detailed study of the system showed that, as expected, at high temperature this is due to boron ionisation. At lower temperatures, however, thermalisation between the different electronic states of boron occurs. An increase in the background absorption with increasing temperature was also observed as a result of internal transitions of the holes within the valence band. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:338 / 341
页数:4
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