Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages

被引：46
|
作者：
Kanai, Shun [1 ]
Gajek, Martin [2 ]
Worledge, D. C. [2 ]
Matsukura, Fumihiro [1 ,3 ,4 ]
Ohno, Hideo [1 ,3 ,4 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
[3] Tohoku Univ, Ctr Spintron Integrated Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[4] Tohoku Univ, WPI AIMR, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 24期
关键词：
SPIN-TRANSFER-TORQUE; ATOMIC LAYERS; MANIPULATION; VECTOR;
D O I：
10.1063/1.4904956
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We measure homodyne-detected ferromagnetic resonance (FMR) induced by the electric-field effect in a CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) with perpendicular magnetic easy axis under dc bias voltages up to 0.1 V. From the bias dependence of the resonant frequency, we find that the first order perpendicular magnetic anisotropy is modulated by the applied electric field, whereas the second order component is virtually independent of the electric field. The lineshapes of the FMR spectra are bias dependent, which are explained by the combination of electric-field effect and reflection of the bias voltage from the MTJ. (C) 2014 AIP Publishing LLC.
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页数：4
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