Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etching

被引：9

作者：

Irrera, Alessia ^{[1
]}

Artoni, Pietro ^{[2
,3
]}

Fioravanti, Valeria ^{[2
,3
]}

Franzo, Giorgia ^{[2
]}

Fazio, Barbara ^{[1
]}

Musumeci, Paolo ^{[3
]}

Boninelli, Simona ^{[2
]}

Impellizzeri, Giuliana ^{[2
]}

Terrasi, Antonio ^{[2
,3
]}

Priolo, Francesco ^{[2
,3
,4
]}

Iacona, Fabio ^{[2
]}

机构：

[1] IPCF CNR, I-98158 Messina, Italy

[2] MATIS IMM CNR, I-95123 Catania, Italy

[3] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[4] Univ Catania, Scuola Super Catania, I-95123 Catania, Italy

来源：

NANOSCALE RESEARCH LETTERS | 2014年 / 9卷

关键词：

Nanowires; Photoluminescence; Semiconductor nanostructures; SILICON NANOWIRES; PHOTOLUMINESCENCE; SIZE;

D O I：

10.1186/1556-276X-9-74

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Multi-quantum well Si/Ge nanowires (NWs) were realized by combining molecular beam epitaxy deposition and metal-assisted wet etching, which is a low-cost technique for the synthesis of extremely dense (about 10(11) cm(-2)) arrays of NWs with a high and controllable aspect ratio. In particular, we prepared ultrathin Si/Ge NWs having a mean diameter of about 8 nm and lengths spanning from 1.0 to 2.7 mu m. NW diameter is compatible with the occurrence of quantum confinement effects and, accordingly, we observed light emission assignable to the presence of Si and Ge nanostructures. We performed a detailed study of the photoluminescence properties of the NWs, with particular attention to the excitation and de-excitation properties as a function of the temperature and of the excitation photon flux, evaluating the excitation cross section and investigating the presence of non-radiative phenomena.

引用

页码：1 / 7

页数：7

共 23 条

[1] Structure and photoluminescence properties of evaporated GeOx/SiO2 multilayers [J].