Raising the metal-insulator transition temperature of VO2 thin films by surface adsorption of organic polar molecules

被引：25

作者：

Shioya, Hiroki ^{[1
,2
]}

Shoji, Yoshiaki ^{[3
]}

Seiki, Noriya ^{[3
]}

Nakano, Masaki ^{[1
,2
]}

Fukushima, Takanori ^{[3
]}

Iwasa, Yoshihiro ^{[1
,2
,4
]}

机构：

[1] Univ Tokyo, Quantum Phase Elect Ctr, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[3] Tokyo Inst Technol, Chem Resources Lab, Yokohama, Kanagawa 2268503, Japan

[4] RIKEN, Ctr Emergent Matter Sci CEMS, Wako, Saitama 3510198, Japan

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 12期

关键词：

VANADIUM DIOXIDE; MOTT TRANSITION; SEMICONDUCTORS;

D O I：

10.7567/APEX.8.121101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a molecular adsorption effect on the first-order metal-insulator transition of vanadium dioxide (VO2) thin films. The phase transition temperature is shifted higher by the adsorption of particular polar and rigid tripodal molecules on the film surfaces. The shift becomes larger with increasing dipole moment magnitude, which ranges from 0 to 20D. The orientation of polar molecules aligned on the surface is most likely responsible for the higher shift of the transition temperature. Coating the surfaces with polar molecules, as demonstrated in this work, might provide a unique way of controlling the phase transition of materials. (C) 2015 The Japan Society of Applied Physics

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页数：4

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