Inspection performances of the electron beam inspection system based on projection electron microscopy

被引：5

作者：

Nagahama, I ^{[1
]}

Onishi, A ^{[1
]}

Yamazaki, Y ^{[1
]}

Satake, T ^{[1
]}

Noji, N ^{[1
]}

机构：

[1] Toshiba Co Ltd, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2 | 2004年 / 5375卷

关键词：

EBI-PEM; EBI-SEM; capture rate; inspection speed; pixel size;

D O I：

10.1117/12.534909

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The production prototype of an electron beam inspection system based on projection electron microscopy (EBI-PEM) has been developed. Inspection performances of the EBI-PEM were evaluated using the programmed defect standard wafer delivered by SELETE. We confirmed the EBI-PEM had the same inspection speed, 9 cm(2)/h, as the conventional electron beam inspection system based on scanning electron microscopy (EBI-SEM) under the following conditions: pixel size of 50 nm and defect capture rate of more than 80%. Furthermore, the EBI-PEM achieved an inspection speed of 36 cm(2)/h. This inspection speed is four times higher than that of the EBI-SEM. The EBI-PEM would be an effective tool for inspection subsequent to the 90 nm technology node generation.

引用

页码：921 / 928

页数：8

共 4 条

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