20-Gbit/s multiplexer and demultiplexer ICs using production-level silicon bipolar transistors

被引：0
作者：
Sano, E [1 ]
机构：
[1] NTT, Network Innovat Labs, Yokosuka, Kanagawa 2390847, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2000年 / E83C卷 / 02期
关键词：
Si bipolar transistor; multiplexer; demultiplexer; ECL;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
20-Gbit/s multiplexer (MUX) and demultiplexer (DEMUX) ICs are successfully fabricated using production-level high-performance super-self-aligned silicon bipolar transistors (HSSTs) with a unity current gain cutoff frequency of 50 GHz and a maximum oscillation frequency of 65 GHz.
引用
收藏
页码：263 / 265
页数：3
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