The growth of an ordered Mn layer on the Si(111)-1 x 1-Ho surface

被引：2
|
作者：
Reakes, Michael B. [1 ]
Eames, Chris [1 ]
Tear, Steve P. [1 ]
机构：
[1] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2009年 / 21卷 / 26期
基金：
英国工程与自然科学研究理事会;
关键词：
ELECTRONIC-STRUCTURE; MANGANESE SILICIDE; EPITAXIAL-GROWTH; SCHOTTKY-BARRIER; ROOM-TEMPERATURE; FILMS; CLUSTERS; SI;
D O I：
10.1088/0953-8984/21/26/265001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The growth of ordered Mn layers on room temperature and liquid nitrogen cooled Si(111)-1 x 1-Ho surfaces has been studied using scanning tunnelling microscopy. We have shown for 4 ML (monolayers) of Mn grown on a cooled Si(111)-1 x 1-Ho surface that an ordered Mn layer is produced without any, or with only limited, silicide formation. This surface exhibits a (root 3 x root 3)R30 degrees low energy electron diffraction pattern. Significant variations in Mn island sizes have also been seen on the Si(111)-1 x 1-Ho and Si(111)-7 x 7 surfaces for Mn deposited at room temperature and at-180 degrees C.
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页数：7
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