The growth of an ordered Mn layer on the Si(111)-1 x 1-Ho surface

被引：2
|
作者：
Reakes, Michael B. [1 ]
Eames, Chris [1 ]
Tear, Steve P. [1 ]
机构：
[1] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2009年 / 21卷 / 26期
基金：
英国工程与自然科学研究理事会;
关键词：
ELECTRONIC-STRUCTURE; MANGANESE SILICIDE; EPITAXIAL-GROWTH; SCHOTTKY-BARRIER; ROOM-TEMPERATURE; FILMS; CLUSTERS; SI;
D O I：
10.1088/0953-8984/21/26/265001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The growth of ordered Mn layers on room temperature and liquid nitrogen cooled Si(111)-1 x 1-Ho surfaces has been studied using scanning tunnelling microscopy. We have shown for 4 ML (monolayers) of Mn grown on a cooled Si(111)-1 x 1-Ho surface that an ordered Mn layer is produced without any, or with only limited, silicide formation. This surface exhibits a (root 3 x root 3)R30 degrees low energy electron diffraction pattern. Significant variations in Mn island sizes have also been seen on the Si(111)-1 x 1-Ho and Si(111)-7 x 7 surfaces for Mn deposited at room temperature and at-180 degrees C.
引用
收藏
页数：7
相关论文
共 50 条
  • [1] Atomistic investigation on the initial stage of growth and interface formation of Fe on H-terminated Si(111)-(1 x 1) surface
    Kawaguchi, Ryo
    Eguchi, Toyoaki
    Suto, Shozo
    SURFACE SCIENCE, 2019, 686 : 52 - 57
  • [2] Ordered Mn-diluted Au/Si(111) reconstructions
    Denisov, N. V.
    Yakovlev, A. A.
    Utas, O. A.
    Azatyan, S. G.
    Zotov, A. V.
    Saranin, A. A.
    Romashev, L. N.
    Solin, N. I.
    Ustinov, V. V.
    SURFACE SCIENCE, 2012, 606 (1-2) : 104 - 109
  • [3] Layer-by-layer growth of sodium chloride overlayers on an Fe(001)-p(1 x 1)O surface
    Tekiel, Antoni
    Topple, Jessica
    Miyahara, Yoichi
    Gruetter, Peter
    NANOTECHNOLOGY, 2012, 23 (50)
  • [4] Indium Growth on Reconstructed Si(111), √3 x √3 and 4 x 1 In Surfaces
    Vlachos, Dimitrios
    Kamaratos, Mattheos
    Foulias, Stylianos D.
    Bondino, Federica
    Magnano, Elena
    Malvestuto, Marco
    JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (41) : 17693 - 17702
  • [5] Epitaxial growth and magnetic properties of Mn 5 (Si x Ge 1-x ) 3 thin films
    Kang, Sueyeong
    Petit, Matthieu
    Heresanu, Vasile
    Altie, Alexandre
    Beaujard, Thomas
    Bon, Ganael
    Cespedes, Oscar
    Hickey, Brian
    Michez, Lisa
    THIN SOLID FILMS, 2024, 797
  • [6] Growth of (√3 x √3)-Ag and (111) oriented Ag islands on Ge/Si(111) surfaces
    Roy, A.
    Bhattacharjee, K.
    Dev, B. N.
    APPLIED SURFACE SCIENCE, 2009, 256 (02) : 508 - 512
  • [7] Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7 x 7)-"1 x 1" surface phase transition
    Kruegener, Jan
    Osten, H. Joerg
    Fissel, Andreas
    SURFACE SCIENCE, 2013, 618 : 27 - 35
  • [8] Formation of Au nanocluster ordered array on Si(111)-7x7 surface
    Qu, Bo
    Hu, Jin-Hang
    Li, Hang
    Li, Wen-Jie
    Huang, Miao-Ling
    Wu, Qi-Hui
    SURFACE AND INTERFACE ANALYSIS, 2015, 47 (09) : 926 - 929
  • [9] Generation of the Si(111)-(2x1) surface reconstruction by a rapid radiation quench
    Kulakov, MA
    SURFACE SCIENCE, 1997, 372 (1-3) : L266 - L270
  • [10] Influences of Si dopant on geometry and energetic stability of terminated diamond (111)-1 x 1 surfaces
    Wang, Xinchang
    Qiao, Yu
    Zhang, Baocai
    Sun, Fanghong
    DIAMOND AND RELATED MATERIALS, 2020, 109
12345