Analytical transmission line model for complex dielectric constant measurement of thin substrates using T-resonator method

被引:6
作者
Zahedi, Amir [1 ]
Boroumand, Farhad A. [1 ]
Aliakbrian, Hadi [1 ]
机构
[1] KN Toosi Univ Technol, Dept Elect & Elect, Tehran, Iran
关键词
S-parameters; equivalent circuits; permittivity; dielectric resonance; analytical transmission line model; complex dielectric constant measurement; microstrip T-resonator dielectric constant measurement method; complex dielectric permittivity; T-matrix equivalent circuit; attenuation constants; stub line; open-ended stub; propagation constant parameters; resonance frequency; measured S-parameters; thin substrates; 31 mil RO4003C substrate; full-wave simulation; frequency; 1; 0 MHz to 8; 0; GHz; MICROWAVE CHARACTERIZATION; DISPERSION FORMULA; MICROSTRIP LINES; ACCURATE MODEL; PERMITTIVITY; LOSSES; DESIGN;
D O I
10.1049/iet-map.2019.1117
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents a new analytical transmission line model for microstrip T-resonator dielectric constant measurement method in order to simplify the extraction of the complex dielectric permittivity of the substrate and increase its accuracy. The proposed new formula, which is based on the T-matrix equivalent circuit of the structure, is only dependent on the propagation and attenuation constants of the stub line. Two new formulas to determine the end effect of open-ended stub and the propagation constant parameters are also presented. As an example, a T-resonator is implemented on a 31 mil RO4003C substrate, and it is simulated and measured S-parameter results in the range of 1 MHz-8 GHz are used to calculate a complex dielectric constant of the substrate at each resonance frequency. A full-wave simulation is also used to confirm the accuracy of the proposed model. The comparison between the simulated and the measured S-parameters demonstrates a relative error of <1% over the frequency range.
引用
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页码:2027 / 2034
页数:8
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