Phonon scattering of oxygen-related defects in annealed silicon crystals

被引：0

作者：

Zeller, F ^{[1
]}

Lassmann, K ^{[1
]}

Eisenmenger, W ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Phys 1, D-70550 Stuttgart, Germany

来源：

PHYSICA B-CONDENSED MATTER | 2002年 / 316卷

关键词：

phonon spectroscopy; oxygen precipitation; silicon;

D O I：

10.1016/S0921-4526(02)00531-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown by energy- and time-resolved phonon spectroscopy with superconducting tunnelling junctions that acoustic phonon scattering depends on the size of oxygen precipitates in the annealed Czochralski silicon crystals. After thermal treatments around 1050degreesC we find a series of rather narrow scattering resonances that shift under stress. They are possibly due to electronic excitations of acceptor-like states related to oxygen aggregation. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：417 / 420

页数：4

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