Cluster-suppressed plasma chemical vapor deposition method for high quality hydrogenated amorphous silicon films

被引：45

作者：

Koga, K ^{[1
]}

Kai, M

Shiratani, M

Watanabe, Y

Shikatani, N

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Dept Elect, Fukuoka 8128581, Japan

[2] Fukuoka Inst Technol, Dept Funct Mat, Fukuoka 8110214, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 2B期

关键词：

cluster; plasma CVD; amorphous silicon; microstructure parameter; light induced defect; silane; rf discharge;

D O I：

10.1143/JJAP.41.L168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a novel plasma chemical vapor deposition (PCVD) method for preparing high quality hydrogenated amorphous silicon (a-Si:H) films, which suppresses effectively growth of clusters by transporting them out of the reactor using gas flow and thermophoresis. By utilizing this cluster-suppressed PCVD method, we have demonstrated deposition of quite high quality a-Si:H films, microstructure parameter R-alpha of which can be reduced below 0.003. The decrease in Ralpha value is closely related to the decrease in cluster amount. Preliminary evaluation of fill factor (FF) of the a-Si:H Schottky solar cell of the a-Si:H films of R-alpha = 0.057 shows the high initial value FFi = 0.57 and high stabilized value after-light-soaking FFa = 0.53.

引用

页码：L168 / L170

页数：3

共 50 条

[31] Plasma enhanced chemical vapor deposition of silicon under relatively high pressure conditions
Amanatides, E
Lykas, B
Mataras, D
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2005, 33 (02) : 372 - 373
[32] A study of optical properties of hydrogenated microcrystalline silicon films prepared by plasma enhanced chemical vapor deposition technique at different conditions of excited power and pressure
Badran, R. I.
Al-Hazmi, F. S.
Al-Heniti, S.
Al-Ghamdi, A. A.
Li, J.
Xiong, S.
VACUUM, 2009, 83 (07) : 1023 - 1030
[33] Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 °C
Moreno, Mario
Patriarche, Gilles
Roca i Cabarrocas, Pere
JOURNAL OF MATERIALS RESEARCH, 2013, 28 (13) : 1626 - 1632
[34] High-rate deposition of high-quality silicon nitride film at room temperature by quasi-remote plasma chemical vapor deposition
Suzuki, N
Hayashi, S
Masu, K
Tsubouchi, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (12B): : 6824 - 6826
[35] Deposition of silicon nitride films using chemical vapor deposition for photovoltaic applications
Jhansirani, K.
Dubey, R. S.
More, M. A.
Singh, Shyam
RESULTS IN PHYSICS, 2016, 6 : 1059 - 1063
[36] STRUCTURE AND PROPERTIES OF SILICON TITANIUM-OXIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION METHOD
KAMADA, T
KITAGAWA, M
SHIBUYA, M
HIRAO, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3594 - 3596
[37] Atom-by-atom simulations of chemical vapor deposition of nanoporous hydrogenated silicon nitride
Houska, J.
Klemberg-Sapieha, J. E.
Martinu, L.
JOURNAL OF APPLIED PHYSICS, 2010, 107 (08)
[38] Relationship between textured structure of substrates and defect density of catalytic chemical vapor deposition amorphous silicon films
Sugita, Ken
Koyama, Koichi
Ohdaira, Keisuke
Matsumura, Hideki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (5A): : 2852 - 2857
[39] Optical Properties of Amorphous Silicon Thin Films Deposited by Plasma Chemical Jet Method
Strunin, V. I.
Baranova, L. V.
Lyahov, A. A.
Popov, V. V.
Hudaybergenov, G. J.
Jacob, S. S.
EDM: 2009 10TH INTERNATIONAL CONFERENCE AND SEMINAR ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES, 2009, : 59 - 61
[40] Deposition of silicon carbide films by plasma enhanced chemical vapour deposition
Ramirez, J
Suhr, H
Szepes, L
Zanathy, L
Nagy, A
JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1996, 514 (1-2) : 23 - 28

← 1 2 3 4 5 →