Cluster-suppressed plasma chemical vapor deposition method for high quality hydrogenated amorphous silicon films

被引：45

作者：

Koga, K ^{[1
]}

Kai, M

Shiratani, M

Watanabe, Y

Shikatani, N

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Dept Elect, Fukuoka 8128581, Japan

[2] Fukuoka Inst Technol, Dept Funct Mat, Fukuoka 8110214, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 2B期

关键词：

cluster; plasma CVD; amorphous silicon; microstructure parameter; light induced defect; silane; rf discharge;

D O I：

10.1143/JJAP.41.L168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a novel plasma chemical vapor deposition (PCVD) method for preparing high quality hydrogenated amorphous silicon (a-Si:H) films, which suppresses effectively growth of clusters by transporting them out of the reactor using gas flow and thermophoresis. By utilizing this cluster-suppressed PCVD method, we have demonstrated deposition of quite high quality a-Si:H films, microstructure parameter R-alpha of which can be reduced below 0.003. The decrease in Ralpha value is closely related to the decrease in cluster amount. Preliminary evaluation of fill factor (FF) of the a-Si:H Schottky solar cell of the a-Si:H films of R-alpha = 0.057 shows the high initial value FFi = 0.57 and high stabilized value after-light-soaking FFa = 0.53.

引用

页码：L168 / L170

页数：3

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