Lattice structure and microwave dielectric properties of [Mg0.5Si0.5]3+-doped LiAlO2 solid solution

被引:6
作者
Lan, Xue-Kai [1 ,2 ]
Li, Jia-Pu [1 ]
Li, Jie [1 ,2 ]
Zou, Zheng-Yu [1 ,2 ]
Fan, Gui-Fen [1 ,2 ]
Lu, Wen-Zhong [1 ,2 ]
Lei, Wen [1 ,2 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China
[2] Minist Educ, Key Lab Funct Mat Elect Informat B, Wuhan 430074, Hubei, Peoples R China
基金
中国国家自然科学基金;
关键词
SINTERING BEHAVIOR; BOND-ENERGY; CERAMICS; GLASS;
D O I
10.1007/s10854-019-01540-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Microwave dielectric properties of low-permittivity LiAl1-x(Mg0.5Si0.5)(x)O-2 (LAMS) (x=0.02-0.2) ceramics synthesised through solid-state reaction route were investigated. All compositions show pure LiAlO2 phase with a P4(1)2(1)2 space group at x0.18. Microstructure and relative permittivity (epsilon(r)) were greatly affected by the partial substitution of [Mg0.5Si0.5](3+) for Al3+ site. Bond energy decreased with increasing x value, thereby increasing the temperature coefficient of resonant frequency ((f)) in the negative direction. Finally, the optimum microwave dielectric properties of LAMS (x=0.02) sample were obtained at 1300 degrees C with epsilon(r)=6.17, Qxf=53,300GHz and (f)=-129ppm/degrees C. Then CaTiO3 was added to the LAMS (x=0.02) material to adjust the (f) value to near zero.
引用
收藏
页码:11764 / 11770
页数:7
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