Hydrogen Related Defects in Float Zone Silicon Investigated Using a Shielded Hydrogen Plasma

被引：0

作者：

Bourret-Sicotte, Gabrielle ^{[1
]}

Hamer, Phillip G. ^{[1
]}

Tweddle, David ^{[1
]}

Bonilla, Ruy S. ^{[1
]}

Wilshaw, Peter R. ^{[1
]}

机构：

[1] Univ Oxford, Dept Mat, Parks Rd, Oxford OX1 3PH, England

来源：

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年

基金：

英国工程与自然科学研究理事会;

关键词：

hydrogen; bulk defects; n-type float zone; silicon; LIGHT-INDUCED DEGRADATION; CRYSTALLINE SEMICONDUCTORS; N-TYPE; PASSIVATION; DIFFUSION;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

Shielded Hydrogen Passivation (SHP) has been shown to be an effective technique to introduce atomic hydrogen to silicon samples. This allows the study of hydrogen related defects at a range of temperatures without any UV or other process damage. It is found that at 350 degrees C, introduction of atomic hydrogen can cause near surface damage into n-type material that greatly reduces carrier lifetime. In contrast, p-type samples showed no initial degradation, followed by signs of degradation under hot light soaking.

引用

页码：0298 / 0302

页数：5

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