Hydrogen Related Defects in Float Zone Silicon Investigated Using a Shielded Hydrogen Plasma

被引:0
作者
Bourret-Sicotte, Gabrielle [1 ]
Hamer, Phillip G. [1 ]
Tweddle, David [1 ]
Bonilla, Ruy S. [1 ]
Wilshaw, Peter R. [1 ]
机构
[1] Univ Oxford, Dept Mat, Parks Rd, Oxford OX1 3PH, England
来源
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年
基金
英国工程与自然科学研究理事会;
关键词
hydrogen; bulk defects; n-type float zone; silicon; LIGHT-INDUCED DEGRADATION; CRYSTALLINE SEMICONDUCTORS; N-TYPE; PASSIVATION; DIFFUSION;
D O I
暂无
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Shielded Hydrogen Passivation (SHP) has been shown to be an effective technique to introduce atomic hydrogen to silicon samples. This allows the study of hydrogen related defects at a range of temperatures without any UV or other process damage. It is found that at 350 degrees C, introduction of atomic hydrogen can cause near surface damage into n-type material that greatly reduces carrier lifetime. In contrast, p-type samples showed no initial degradation, followed by signs of degradation under hot light soaking.
引用
收藏
页码:0298 / 0302
页数:5
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