Fundamental studies of ZnO nanowires with ZnCdO/ZnO multiple quantum wells grown for tunable light emitters

被引：8

作者：

Pietrzyk, M. A. ^{[1
]}

Wierzbicka, A. ^{[1
]}

Zielony, E. ^{[2
]}

Pieniazek, A. ^{[1
]}

Szymon, R. ^{[2
]}

Placzek-Popko, E. ^{[2
]}

机构：

[1] Polish Acad Sci, Inst Phys, Aleja Lotnikow 32-46, PL-02668 Warsaw, Poland

[2] Wroclaw Univ Sci & Technol, Dept Quantum Technol, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2020年 / 315卷

关键词：

Semiconductors; Oxide materials; Crystal grown; Luminescence; X-ray diffraction; GAN NANOWIRES;

D O I：

10.1016/j.sna.2020.112305

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Among various elements, cadmium incorporation into ZnO serves the purpose of bandgap narrowing effi-ciently, because of lower bandgap of CdO as compared to ZnO. Therefore, ZnCdO/ZnO multiple quantum wells (MQWs) nanowires on silicon substrates, which are under investigations in this paper, might find applications as laser sources and other oxide-based quantum devices. In the submitted paper we report on the structural and luminescence properties of the aforementioned ZnCdO/ZnO MQWs nanowires grown on Si substrate. The 30 period ZnCdO/ZnO MQWs nanowire heterostructures were fabricated by molecular beam epitaxy method without employing a catalyst such as Au or Ag. The structure of nanowires has been characterized using X-ray diffraction, Raman spectroscopy and scanning electron microscopy. Optical properties of the structures were studied by photoluminescence technique. (c) 2020 Elsevier B.V. All rights reserved.

引用

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