The formulas for temperature dependence of lambda(chi(real), E-g, T) , lambda(chi(real), E-g, T)(p), delta and sigma of insulators with less impurities were deduced and proved to be true; lambda(chi(real), E-g, T) is the mean escape depth of secondary electrons emitted from insulators with efficient electron affinity chi(real) and band gap E-g at Kelvin temperature T, lambda(chi(real), E-g, T)(p) is the lambda(chi(real), E-g, T) due to electron-lattice scatterring in insulators, delta is secondary electron yield, sigma is total delta. Analyses of data and the deduced formulas indicate that the temperature dependence of delta and sigma of insulators with less impurities increase with the increasing [lambda(chi(real), E-g, T)/lambda(chi(real), E-g, T)(p)], and that lambda(chi(real), E-g, T), lambda(chi(real), E-g, T)(p), delta and sigma of insulators with less impurities decrease nearly linearly with increasing T in the range T > Theta(D) but decrease nonlinearly with increasing Tin the range m Theta(D) < T < Theta(D), Theta(D) is Debye temperature, m of a given insulator is a constant which is < 0.4. The method of obtaining lambda(chi(real), E-g, T)(Mee )and corresponding chi(real )by secondary electron emission (SEE) was presented, lambda(chi(real), E-g, T)(Mee )is the lambda(chi(real), E-g, T) due to electron-electron scatterring in insulator. It concludes that the method presented here to obtain special formula for lambda(chi(real), E-g, T)(p) and corresponding chi(real) is a good method to research electron-lattice interaction by SEE, and that the method presented here to obtain values of lambda(chi(real), E-g, T)(Mee) and corresponding chi(real )is a good method to research electron-electron interaction by SEE. According to the values of Theta(D), experimental sigma, characteristics of temperature dependence of delta and sigma and deduced formulas, it concludes that the method presented here to determine Theta(D) by SEE is a better method to determine Theta(D) of insulator with less impurities.