Optical characterization of the free electron gas in bulk single crystals of GaN by means of Raman scattering and infrared reflectivity: Evidence of phonon-plasmon coupled modes.

被引：0

作者：

Perlin, P

Knap, W

Taliercio, T

Camassel, J

Robert, JL

Suski, T

Grzegory, I

Jun, J

Porowski, S

Chervin, JC

机构：

[1] UNIV MONTPELLIER 2,UM2,CNRS,ETUD SEMICOND GRP,F-34095 MONTPELLIER 5,FRANCE

[2] UNIV PARIS 06,LAB PHYS MILIEUX CONDENSES,PARIS 05,FRANCE

来源：

SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a cross-correlated investigation of Raman scattering and infrared spectroscopy of bulk GaN. We have used different samples, with different (high) residual concentrations of free carriers, and report experimental results which are typical of coupled LO phonon-plasmon modes. Clearly this establishes both far infrared reflection and Raman scattering as powerful and non destructive tools to investigate the residual doping level of GaN samples up to about 10(20) cm(-3).

引用

页码：951 / 954

页数：4

共 5 条

[1] INFRARED LATTICE-VIBRATIONS AND FREE-ELECTRON DISPERSION IN GAN [J].