Elastic strain engineering for ultralow mechanical dissipation

被引：240

作者：

Ghadimi, A. H. ^{[1
]}

Fedorov, S. A. ^{[1
]}

Engelsen, N. J. ^{[1
]}

Bereyhi, M. J. ^{[1
]}

Schilling, R. ^{[1
]}

Wilson, D. J. ^{[2
]}

Kippenberg, T. J. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Phys, CH-1015 Lausanne, Switzerland

[2] IBM Res Zurich, CH-8803 Ruschlikon, Switzerland

来源：

SCIENCE | 2018年 / 360卷 / 6390期

基金：

欧洲研究理事会;

关键词：

D O I：

10.1126/science.aar6939

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Extreme stresses can be produced in nanoscale structures; this feature has been used to realize enhanced materials properties, such as the high mobility of silicon in modern transistors. We show how nanoscale stress can be used to realize exceptionally low mechanical dissipation when combined with "soft-clamping"-a form of phononic engineering. Specifically, using a nonuniform phononic crystal pattern, we colocalize the strain and flexural motion of a free-standing silicon nitride nanobeam. Ringdown measurements at room temperature reveal string-like vibrational modes with quality (Q) factors as high as 800 million and Q x frequency exceeding 10(15) hertz. These results illustrate a promising route for engineering ultracoherent nanomechanical devices.

引用

页码：764 / +

页数：5

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