Decay mechanisms of excited electrons in quantum-well states of ultrathin Pb islands grown on Si(111): Scanning tunneling spectroscopy and theory

被引：52

作者：

Hong, I-Po ^{[1
]}

Brun, Christophe ^{[1
]}

Patthey, Francois ^{[1
]}

Sklyadneva, I. Yu. ^{[2
,3
]}

Zubizarreta, X. ^{[2
,4
,5
]}

Heid, R. ^{[6
]}

Silkin, V. M. ^{[2
,4
,5
]}

Echenique, P. M. ^{[2
,4
,5
]}

Bohnen, K. P. ^{[6
]}

Chulkov, E. V. ^{[2
,4
,5
]}

Schneider, Wolf-Dieter ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Phys Mat Condensee, CH-1015 Lausanne, Switzerland

[2] DIPC, San Sebastian 20018, Basque Country, Spain

[3] Inst Strength Phys & Mat Sci, Tomsk 634021, Russia

[4] Univ Basque Country, Dept Fis Mat, San Sebastian 20080, Basque Country, Spain

[5] Univ Basque Country, Fac Ciencias Quim, CSIC, Ctr Mixto, San Sebastian 20080, Basque Country, Spain

[6] Forschungszentrum Karlsruhe, Inst Festkorperphys, D-76021 Karlsruhe, Germany

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 08期

基金：

瑞士国家科学基金会;

关键词：

ab initio calculations; electron-phonon interactions; elemental semiconductors; lead; metallic thin films; quantum wells; scanning tunnelling spectroscopy; silicon; spectral line broadening; SURFACE; FILMS; MICROSCOPE; LIFETIME;

D O I：

10.1103/PhysRevB.80.081409

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using low-temperature scanning tunneling spectroscopy at 5 and 50 K, we studied the linewidth of unoccupied quantum-well states in ultrathin Pb islands, grown on Si(111) on two different Pb/Si interfaces. A quantitative analysis of the differential conductance spectra allowed us to determine the electron-electron (e-e), electron-phonon (e-ph) and the interface and defect contributions to the lifetime. Layer-dependent ab initio calculations of the e-ph linewidth contribution are in excellent agreement with the data. Importantly, the sum of the calculated e-e and e-ph lifetime broadening follows the experimentally observed quadratic energy dependence.

引用

页数：4

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*EPAPS, EPRBMDO80R26932 EPAP

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