Abnormal grain growth in silicon steel

Grain growth during secondary recrystallization of polycrystalline materials is controlled by driving force and grain boundary mobility. Experiments and simulations have been carried out to sort out which of these effects are responsible for the development of the sharp Goss texture during secondary recrystallization of Si-steel. The influence of surface energy and chemical composition difference as driving force for abnormal Goss grain growth has been investigated by EBSD measurements. In modeling of abnormal grain growth by a Monte Carlo method, mobility of CSL grain boundaries and high energy grain boundaries have been checked using EBSD measurement results as initial microstructure. The real orientation distribution of the material has been taken into account.