Epitaxial crystallization and nucleation during MeV-ion beam processing of amorphous GaAs surface layers

被引：6
|
作者：
Bachmann, T [1 ]
Glaser, E [1 ]
Schulz, R [1 ]
Kaiser, U [1 ]
Safran, G [1 ]
机构：
[1] RES INST TECH PHYS,H-1325 BUDAPEST,HUNGARY
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 113卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(95)01306-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
[100]-GaAs wafers were preamorphized in a thin surface layer using 50 keV N-14(+)-ions. Ion beam induced epitaxial crystallization (IBIEC) and interfacial amorphization (IBIIA) were studied as a function of the target temperature using MeV Ar+- or Kr+-ions. Backscattering experiments and electron microscopy show that the IBIEC process is stopped above a critical irradiation temperature due to enhanced ion beam induced nucleation and growth of crystallites. At a fixed dose an optimum irradiation temperature for IBIEC was found, at which the recrystallized layer thickness has a maximum and crystallite formation is negligible. This offers the possibility to crystallize much larger layer thicknesses than approximate to 65 nm which stands for the maximum value reported up to now.
引用
收藏
页码：214 / 217
页数：4
相关论文
共 50 条
  • [41] Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1-xCx layers in Si fabricated by C ion implantation
    Kobayashi, N
    Zhu, DH
    Hasegawa, M
    Katsumata, H
    Tanaka, Y
    Hayashi, N
    Makita, Y
    Shibata, H
    Uekusa, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 350 - 354
  • [42] Study of amorphous layer on CVD diamond surface induced by Ga ion implantation in focused ion beam processing
    Jia, Guangjun
    Chen, Guoxin
    Zhang, Lei
    Cui, Junfeng
    Duan, Beichen
    Zhuang, Boxiang
    Li, Yutong
    Lu, Huanming
    Jiang, Nan
    Nishimura, Kazuhito
    Ke, Peiling
    DIAMOND AND RELATED MATERIALS, 2024, 145
  • [43] ION-BEAM ANNEALING EFFECTS OF SURFACE AMORPHOUS LAYERS PRODUCED BY SB IMPLANTED (100) NI USING 1.5 MEV XE+ AND AR+ ION-BEAMS
    BELATTAR, A
    STEPHENS, GA
    CARDWELL, PD
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 93 (03) : 261 - 267
  • [44] Arsenic surface segregation during the molecular-beam epitaxial growth of GaAs embedded in wurtzite GaN
    Kim, H
    Andersson, TG
    APPLIED PHYSICS LETTERS, 2002, 80 (25) : 4768 - 4770
  • [45] Migration process on Ga-terminated GaAs(001) surface during molecular beam epitaxial growth
    Seino, K
    Ishii, A
    Aisaka, T
    PROGRESS OF THEORETICAL PHYSICS SUPPLEMENT, 2000, (138): : 164 - 165
  • [46] Nanostructuring of Surface Layers of Corrosion-Resistant Austenitic Steels during High-Intensity Ion-Beam Processing
    Bely, A. V.
    Kukarenko, V. A.
    Taran, I. I.
    METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2011, 33 (01): : 117 - 129
  • [47] Surface-morphology evolution during growth-interrupt in situ annealing on GaAs(110) epitaxial layers
    Yoshita, Masahiro
    Akiyama, Hidefumi
    Pfeiffer, Loren N.
    West, Ken W.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (10)
  • [48] ACTIVATION OF GERMANIUM ACCEPTORS DURING SICL4 REACTIVE-ION ETCHING OF MOCVD GAAS EPITAXIAL LAYERS
    WEBER, J
    SAWYER, WD
    HARRIS, CI
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 263 - 266
  • [49] SURFACE AND INTERFACE FREE-CARRIER DEPLETION IN GAAS MOLECULAR-BEAM EPITAXIAL LAYERS - DEMONSTRATION OF HIGH INTERFACE CHARGE
    LOOK, DC
    STUTZ, CE
    EVANS, KR
    APPLIED PHYSICS LETTERS, 1990, 56 (07) : 668 - 670
  • [50] Effect of surface nucleation on the evolution of crystalline microstructure during solid phase crystallization of amorphous Si on SiO2
    Ryu, MK
    Hwang, SM
    Kim, TH
    Kim, KB
    PROCEEDINGS OF THE THIRD SYMPOSIUM ON THIN FILM TRANSISTOR TECHNOLOGIES, 1997, 96 (23): : 310 - 316
12345