Epitaxial crystallization and nucleation during MeV-ion beam processing of amorphous GaAs surface layers

被引：6

作者：

Bachmann, T ^{[1
]}

Glaser, E ^{[1
]}

Schulz, R ^{[1
]}

Kaiser, U ^{[1
]}

Safran, G ^{[1
]}

机构：

[1] RES INST TECH PHYS,H-1325 BUDAPEST,HUNGARY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 113卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)01306-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

[100]-GaAs wafers were preamorphized in a thin surface layer using 50 keV N-14(+)-ions. Ion beam induced epitaxial crystallization (IBIEC) and interfacial amorphization (IBIIA) were studied as a function of the target temperature using MeV Ar+- or Kr+-ions. Backscattering experiments and electron microscopy show that the IBIEC process is stopped above a critical irradiation temperature due to enhanced ion beam induced nucleation and growth of crystallites. At a fixed dose an optimum irradiation temperature for IBIEC was found, at which the recrystallized layer thickness has a maximum and crystallite formation is negligible. This offers the possibility to crystallize much larger layer thicknesses than approximate to 65 nm which stands for the maximum value reported up to now.

引用

页码：214 / 217

页数：4

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