Magnetic hysteresis loop tuning in antiferromagnetically coupled bilayer structures

被引:50
作者
Berger, A [1 ]
Margulies, DT [1 ]
Do, H [1 ]
机构
[1] Hitachi Global Storage Technol, San Jose Res Ctr, San Jose, CA 95120 USA
关键词
D O I
10.1063/1.1787161
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have utilized antiferromagnetically coupled bilayer structures to magnetically tune hysteresis loop properties. A key element of this approach is the nonoverlapping switching field distribution of the two magnetic layers. This allows measurement of the magnetization reversal in the soft-magnetic layer (SL) at low fields without perturbing the magnetic state of the hard-magnetic layer (HL). The magnetization of HL can be changed by an appropriate high-field sequence, which also modifies the effective disorder level in SL due to the antiferromagnetic interlayer coupling. Variations of the SL hysteresis loop squareness by a factor of up to 50 are reported by utilizing this fully reversible tuning procedure. (C) 2004 American Institute of Physics.
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页码:1571 / 1573
页数:3
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