A broadband, low-crosstalk and low polarization dependent silicon nitride waveguide crossing based on the multimode-interference

被引：14

作者：

Yang, Huimin ^{[1
]}

Zheng, Pengfei ^{[1
]}

Hu, Guohua ^{[1
]}

Zhang, Ruohu ^{[1
]}

Yun, Binfeng ^{[1
]}

Cui, Yiping ^{[1
]}

机构：

[1] Southeast Univ, Adv Photon Ctr, Nanjing 210096, Jiangsu, Peoples R China

来源：

OPTICS COMMUNICATIONS | 2019年 / 450卷

基金：

美国国家科学基金会;

关键词：

Waveguide crossing; Multimode-interference; Silicon nitride waveguides; Self-imaging; COMPACT; PLATFORM; TRIPLEX; DESIGN;

D O I：

10.1016/j.optcom.2019.05.052

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A silicon nitride waveguide crossing based on multimode-interference is designed and fabricated. By optimizing the structure parameters with finite difference time domain method, 0.3 dB insertion loss and -75 dB crosstalk at 1550 nm are obtained. Then the designed waveguide crossing is fabricated based on the double strip silicon nitride waveguide. The measured results show the insertion loss and crosstalk are about 0.6 dB and below -42 dB, respectively, in the wavelength range of 1520 nm similar to 1640 nm with low polarization dependence. The waveguide crossing could be a key building block for the silicon nitride waveguide platform.

引用

页码：28 / 33

页数：6

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