Correlation between electron spin and light circular polarization in strained semiconductors

被引:5
作者
Wang, Wenfeng [1 ]
Allaart, Klaas
Lenstra, Daan
机构
[1] Vrije Univ Amsterdam, Dept Phys & Astron, NL-1081 HV Amsterdam, Netherlands
[2] Eindhoven Univ Technol, COBRA Inst, NL-5600 MB Eindhoven, Netherlands
关键词
D O I
10.1103/PhysRevB.74.073201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Influence of strain on the correlation between the electron polarization P-s and the circular polarization of the emitted light P-cir is studied for heterostructure semiconductors within the Luttinger-Kohn model. In the unstrained spin polarized semiconductor, the heavy-hole as well as light-hole wave functions have equal weight expansions of the basis states. Therefore, the relation between P-cir and P-s is just a factor -1/2. In the case of uniaxial strain this factor varies with the luminescence photon energy, between roughly -0.9 and 0.8. This provides a sensitive method for detection of strain in bulk semiconductor and also suggests a tool for efficient optical excitation of spin polarized conduction electrons in a strained semiconductor.
引用
收藏
页数:4
相关论文
共 14 条
[1]   Quantum-well band structure effects on the emission polarization from a spin-polarized electron reservoir [J].
Agrawal, M ;
Solomon, GS .
APPLIED PHYSICS LETTERS, 2004, 85 (10) :1820-1822
[2]   OBSERVATION OF SPIN-POLARIZED-ELECTRON TUNNELING FROM A FERROMAGNET INTO GAAS [J].
ALVARADO, SF ;
RENAUD, P .
PHYSICAL REVIEW LETTERS, 1992, 68 (09) :1387-1390
[3]   THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF GAINASP-INP DH LASERS [J].
ASADA, M ;
ADAMS, AR ;
STUBKJAER, KE ;
SUEMATSU, Y ;
ITAYA, Y ;
ARAI, S .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :611-619
[4]  
Bir G.L., 1972, Symmetry and strain induced effects in semiconductors
[5]  
CHOW WW, 1994, SEMICONDUCTOR LASER, DOI DOI 10.1007/978-3-642-61225-1
[6]  
Dyakonov M. I., 1984, Optical Orientation
[7]   Injection and detection of a spin-polarized current in a light-emitting diode [J].
Fiederling, R ;
Keim, M ;
Reuscher, G ;
Ossau, W ;
Schmidt, G ;
Waag, A ;
Molenkamp, LW .
NATURE, 1999, 402 (6763) :787-790
[8]   IMPROVED PERFORMANCE OF LONG-WAVELENGTH STRAINED BULK-LIKE SEMICONDUCTOR-LASERS [J].
JONES, G ;
OREILLY, EP .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (05) :1344-1354
[9]   Spin nomenclature for semiconductors and magnetic metals [J].
Jonker, BT ;
Hanbicki, AT ;
Pierce, DT ;
Stiles, MD .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 277 (1-2) :24-28
[10]   Spatially resolved spin-injection probability for gallium arsenide [J].
LaBella, VP ;
Bullock, DW ;
Ding, Z ;
Emery, C ;
Venkatesan, A ;
Oliver, WF ;
Salamo, GJ ;
Thibado, PM ;
Mortazavi, M .
SCIENCE, 2001, 292 (5521) :1518-1521