Resistive Switching Memory Devices Based on Proteins

被引：153

作者：

Wang, Hong ^{[1
]}

Meng, Fanben ^{[1
]}

Zhu, Bowen ^{[1
]}

Leow, Wan Ru ^{[1
]}

Liu, Yaqing ^{[1
]}

Chen, Xiaodong ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

来源：

ADVANCED MATERIALS | 2015年 / 27卷 / 46期

基金：

新加坡国家研究基金会;

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; NONVOLATILE MEMORY; SILK FIBROIN; MEMRISTIVE DEVICES; ELECTRON-TRANSPORT; STATE; RESISTANCE; JUNCTIONS; GRAPHENE;

D O I：

10.1002/adma.201405728

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Resistive switching memory constitutes a prospective candidate for next-generation data storage devices. Meanwhile, naturally occurring biomaterials are promising building blocks for a new generation of environmentally friendly, biocompatible, and biodegradable electronic devices. Recent progress in using proteins to construct resistive switching memory devices is highlighted. The protein materials selection, device engineering, and mechanism of such protein-based resistive switching memory are discussed in detail. Finally, the critical challenges associated with protein-based resistive switching memory devices are presented, as well as insights into the future development of resistive switching memory based on natural biomaterials.

引用

页码：7670 / 7676

页数：7

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