Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing

被引：3

作者：

Zeng, Yuheng ^{[1
]}

Chen, Jiahe ^{[1
]}

Ma, Miangyang ^{[1
]}

Wang, Weiyan ^{[1
]}

Yang, Deren ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 12期

关键词：

Defects; Doping; Impurity; Elemental solids; Semiconducting silicon; COMPLEXES; CRYSTALS; WAFERS; SI; MICROSEGREGATION; FLUCTUATIONS; VACANCIES; DEFECTS; GROWTH; MELT;

D O I：

10.1016/j.jcrysgro.2009.03.048

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Oxygen precipitation in conventional and nitrogen co-doped heavily phosphorus (P)-doped Czochralski silicon (CZ-Si) crystal subjected to various high-temperature annealing in the range of 1000-1150 degrees C was comparatively investigated. It was revealed that oxygen precipitates hardly generated in conventional heavily P-cloped CZ-Si; while they remarkably generated in the nitrogen co-doped one. Moreover, nitrogen doping could enhance oxygen precipitation during the prolonged annealing with a rapid thermal process (RTP) pre-treatment. but it has neglectable influence on oxygen precipitation for short-time annealing. It was believed that nitrogen co-doped heavily P-doped CZ-Si possesses nitrogen-related complexes that act as heterogeneous nuclei for super-saturated interstitial oxygen and then enhanced oxygen precipitation. Finally, it was found that nitrogen doping could hardly enhance oxygen precipitation in heavily P-doped CZ-Si at 1200 degrees C. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：3273 / 3277

页数：5

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