Heteroepitaxial growth of Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films for integrated devices

被引：0
|
作者：
Cheung, HY [1 ]
Hau, FF
Wang, J
Wong, KH
机构：
[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
[2] Hong Kong Polytech Univ, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China
来源：
FERROELECTRICS | 2001年 / 260卷 / 1-4期
关键词：
ferroelectrics; PLD;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
0.65Pb(Mg1/3Nb2/3)O-3-0.35PbTiO(3) (PMN-PT) relaxor ferroelectric thin films have been grown on MgO single crystal and MgO/TiN buffered Si by pulsed laser deposition method. Structural characterization is performed by four-circle mode X-ray diffractometry. The effects of substrate temperature, deposition ambient oxygen pressure and post-annealing on the crystallinity of the PMN-PT films are studied in details. Optimum condition for fabricating high structural quality and pyrochlore-free PMN-PT films is identified. Electrical measurements on the epitaxial PMN-PT films are performed with lattice matched conducting LaSrMnO3 (LSMO) bottom electrode and Au top electrode. Heteroepitaxial relationship of PMN-PT(100)parallel toLSMO(100)parallel toMgO(100) and PMN-PT(100)parallel toLSMO(100)parallel toMgO(100)parallel toTiN(100)parallel toSi(100) are obtained. The potential uses of PMN-PT films in integrated devices are discussed.
引用
收藏
页码：563 / 568
页数：6
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