Evaluation of the depth resolutions of Auger electron spectroscopic, X-ray photoelectron spectroscopic and time-of-flight secondary-ion mass spectrometric sputter depth profiling techniques

被引：26

作者：

Wang, J. Y. ^{[1
]}

Starke, U. ^{[2
]}

Mittemeijer, E. J. ^{[1
]}

机构：

[1] Max Planck Inst Met Res, D-70569 Stuttgart, Germany

[2] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 11期

关键词：

Auger electron spectroscopy; X-ray photoelectron spectroscopy; Secondary ion mass spectroscopy; Depth profiling; Depth resolution; Sputtering induced roughness; Si/Al multilayer; INTERDIFFUSION COEFFICIENT; INFORMATION DEPTH; ROUGHNESS; AES; MULTILAYERS; LAYER;

D O I：

10.1016/j.tsf.2009.01.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Concentration-depth profiles Of sputter-deposited Si/Al multilayered specimens were determined by model fitting to measured data obtained by depth profiling, using Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary-ion mass spectrometry (TOF-SIMS). The model used for calculation of the concentration-depth profile accounts for the broadening ("smearing") upon experimental depth profiling owing to the effects of atomic mixing, preferential sputtering, surface roughness and information depth of either the Auger electrons (for AES depth profiling) or the photoelectrons (for XPS depth profiling) or the secondary ions (for SIMS depth profiling). The depth resolution for each technique was derived directly from the values determined for the fitting parameters in the model. (C) 2009 Published by Elsevier B.V.

引用

页码：3402 / 3407

页数：6

共 13 条

[1]

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[2]

Benninghoven A., 1987, Secondary ion mass spectrometry: basic concepts, instrumental aspects, applications and trends

[3] ATOMIC MIXING, SURFACE-ROUGHNESS AND INFORMATION DEPTH IN HIGH-RESOLUTION AES DEPTH PROFILING OF A GAAS/ALAS SUPERLATTICE STRUCTURE [J].