Peculiarities of Bi doping of Ge-Sb-Te thin films for PCM devices

被引：25

作者：

Kozyukhin, Sergey ^{[1
]}

Sherchenkov, Alexey ^{[2
]}

Babich, Alexey ^{[2
]}

Lazarenko, Petr ^{[2
]}

Huy Phuc Nguyen ^{[1
]}

Prikhodko, Oleg ^{[3
]}

机构：

[1] RAS, NS Kurnakov Gen & Inorgan Chem Inst, Moscow 117901, Russia

[2] Natl Res Univ MIET, Moscow, Russia

[3] Al Farabi Kazakh Natl Univ, Sci Res Inst Expt & Theoret Phys, Alma Ata, Kazakhstan

来源：

CANADIAN JOURNAL OF PHYSICS | 2014年 / 92卷 / 7-8期

关键词：

KINETIC-PARAMETERS; OPTICAL-PROPERTIES;

D O I：

10.1139/cjp-2013-0607

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The influence of Bi doping on the thermal, electrical, and optical properties of Ge2Sb2Te5 thin films was investigated. The existence of two Bi concentration ranges with different influence of dopant on the properties of thin films was established. At low concentrations (0.5-1.0 wt.% of Bi), anomalous deviations of physical properties from monotonous concentration dependences were observed. This effect is explained by the use of percolation theory, where formation of infinite clusters is accompanied by critical phenomena at critical concentrations.

引用

页码：684 / 689

页数：6

共 24 条

[1] An investigation of the kinetic transformation mechanism of Ge12.5Te87.5 chalcogenide glass under non-isothermal regime
Abu El-Oyoun, M.
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2011, 357 (07) : 1729 - 1735
[2] KINETIC PARAMETERS FROM THERMOGRAVIMETRIC DATA .2.
COATS, AW
REDFERN, JP
[J]. JOURNAL OF POLYMER SCIENCE PART B-POLYMER LETTERS, 1965, 3 (11PB): : 917 - &
[3] KINETIC PARAMETERS FROM THERMOGRAVIMETRIC DATA
COATS, AW
REDFERN, JP
[J]. NATURE, 1964, 201 (491) : 68 - &
[4] GENERAL TREATMENT OF THERMOGRAVIMETRY OF POLYMERS
FLYNN, JH
WALL, LA
[J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY, 1966, A 70 (06): : 487 - +
[5] OPTICAL-PROPERTIES OF CRYSTALLINE SEMICONDUCTORS AND DIELECTRICS
FOROUHI, AR
BLOOMER, I
[J]. PHYSICAL REVIEW B, 1988, 38 (03): : 1865 - 1874
[6] Kolomiets B. T., 1963, RADIOTEKH ELEKTRON, V8, P2097
[7] Structural changes in doped Ge2Sb2Te5 thin films studied by Raman spectroscopy
Kozyukhin, S.
Veres, M.
Nguyen, H. P.
Ingram, A.
Kudoyarova, V.
[J]. 10TH INTERNATIONAL CONFERENCE ON SOLID STATE CHEMISTRY, 2013, 44 : 82 - 90
[8] Thermal effects in Ge-Sb-Te phase-change memory materials during multiple thermal cycling
Kozyukhin, Sergey
Sherchenkov, Alexey
Gorschkova, Ekaterina
Kudoyarova, Vera
Vargunin, Alexander
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, 2010, 7 (3-4): : 848 - 851
[9] Evidence for segregation of Te in Ge2Sb2Te5 films:: Effect on the "phase-change" stress
Krusin-Elbaum, L.
Cabral, C., Jr.
Chen, K. N.
Copel, M.
Abraham, D. W.
Reuter, K. B.
Rossnagel, S. M.
Bruley, J.
Deline, V. R.
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (14)
[10] Lazarenko P, 2011, J OPTOELECTRON ADV M, V13, P1400

← 1 2 3 →