Two-dimensional metal-insulator transition as a strong localization induced crossover phenomenon
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作者:
Das Sarma, S.
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Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USAUniv Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA
Das Sarma, S.
[1
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Hwang, E. H.
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Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA
Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Suwon 440746, South Korea
Sungkyunkwan Univ, Dept Phys, Suwon 440746, South KoreaUniv Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA
Hwang, E. H.
[1
,2
,3
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机构:
[1] Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA
[2] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Suwon 440746, South Korea
[3] Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea
Low-disorder and high-mobility two-dimensional (2D) electron (or hole) systems confined in semiconductor heterostructures undergo an apparent metal-insulator transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier density by changing an externally applied in-plane magnetic field parallel to the 2D layer. The goal of the current work is to obtain the critical density (n(c)) for the 2D MIT with the system being an effective metal (Anderson insulator) for density n above (below) n(c). We study the 2D MIT phenomenon theoretically as a possible strong localization induced crossover process controlled by the Ioffe-Regel criterion, k(F)l = 1, where k(F)(n) is the 2D Fermi wave vector and l(n) is the disorder-limited quantum mean free path on the metallic side. Calculating the quantum mean free path in the effective metallic phase from a realistic Boltzmann transport theory including disorder scattering effects, we solve the integral equation (with l depending on n through multidimensional integrals) defined by the Ioffe-Regel criterion to obtain the nonuniversal critical density n(c) as a function of the applicable physical experimental parameters including disorder strength, in-plane magnetic field, spin and valley degeneracy, background dielectric constant and carrier effective mass, and temperature. The key physics underlying the nonuniversal parameter dependence of the critical density is the density dependence of the screened Coulomb disorder. Our calculated results for the crossover critical density n(c) appear to be in qualitative and semiquantitative agreement with the available experimental data in different 2D semiconductor systems lending credence to the possibility that the apparent 2D MIT signals the onset of the strong localization crossover in disordered 2D systems. We also compare the calculated critical density obtained from the Ioffe-Regel criterion with that obtained from a classical percolation theory, concluding that experiments support the Ioffe-Regel criterion for the 2D MIT crossover phenomena.
机构:
Univ Minnesota, Dept Mech Engn, 111 Church St SE, Minneapolis, MN 55455 USAUniv Minnesota, Dept Mech Engn, 111 Church St SE, Minneapolis, MN 55455 USA
Greenberg, Benjamin L.
Robinson, Zachary L.
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Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USAUniv Minnesota, Dept Mech Engn, 111 Church St SE, Minneapolis, MN 55455 USA
Robinson, Zachary L.
Ayino, Yilikal
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Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USAUniv Minnesota, Dept Mech Engn, 111 Church St SE, Minneapolis, MN 55455 USA
Ayino, Yilikal
Held, Jacob T.
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Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USAUniv Minnesota, Dept Mech Engn, 111 Church St SE, Minneapolis, MN 55455 USA
Held, Jacob T.
Peterson, Timothy A.
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Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USAUniv Minnesota, Dept Mech Engn, 111 Church St SE, Minneapolis, MN 55455 USA
Peterson, Timothy A.
Mkhoyan, K. Andre
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Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USAUniv Minnesota, Dept Mech Engn, 111 Church St SE, Minneapolis, MN 55455 USA
Mkhoyan, K. Andre
Pribiag, Vlad S.
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Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USAUniv Minnesota, Dept Mech Engn, 111 Church St SE, Minneapolis, MN 55455 USA
Pribiag, Vlad S.
Aydil, Eray S.
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Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USA
NYU, Tandon Sch Engn, Chem & Biomol Engn Dept, 6 Metrotech Ctr, Brooklyn, NY 11201 USAUniv Minnesota, Dept Mech Engn, 111 Church St SE, Minneapolis, MN 55455 USA
Aydil, Eray S.
Kortshagen, Uwe R.
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Univ Minnesota, Dept Mech Engn, 111 Church St SE, Minneapolis, MN 55455 USAUniv Minnesota, Dept Mech Engn, 111 Church St SE, Minneapolis, MN 55455 USA