GaN-based Semiconductor Devices for Future Power Switching Systems

被引：0

作者：

Ishida, Hidetoshi ^{[1
]}

Kajitani, Ryo ^{[1
]}

Kinoshita, Yusuke ^{[1
]}

Umeda, Hidekazu ^{[1
]}

Ujita, Shinji ^{[1
]}

Ogawa, Masahiro ^{[1
]}

Tanaka, Kenichiro ^{[1
]}

Morita, Tatsuo ^{[1
]}

Tamura, Satoshi ^{[1
]}

Ishida, Masahiro ^{[1
]}

Ueda, Tetsuzo ^{[1
]}

机构：

[1] Panasonic Corp, 3-1-1 Yagumo Nakamachi Moriguchi Shi, Osaka 5708501, Japan

来源：

2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2016年

关键词：

NATURAL SUPER JUNCTION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN-based natural superjunction diodes and Gate Injection Transistors (GITs) with p-type gate on AlGaN/GaN hetero structure are promising power devices with lower on state resistance and higher breakdown voltage for power switching applications. In this paper, the current status of the devices for integrated circuits and their application to power switching systems are reviewed, after explaining the basic technologies for decreasing on-resistance, increasing breakdown voltage, and suppressing current collapse. In addition, a solution to increase switching frequency of GITs for smaller system size is described. The effects of integrated circuit of DC/DC converter consisted of gate driver, high-side OTT and low-side OTT with short gate length are also examined.

引用

页数：4

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