New route to fabricate ferromagnetic semiconductors without transition metal elements

被引：19

作者：

Seike, M ^{[1
]}

Kenmochi, K ^{[1
]}

Sato, K ^{[1
]}

Yanase, A ^{[1
]}

Katayama-Yoshida, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 4B期

关键词：

materials design; potassium sulfide; p-impurity band; ferromagnetism without transition metal elements;

D O I：

10.1143/JJAP.43.L579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a new route for ferromagnetic diluted magnetic semiconductors by controlling the impurity-band width (W) and the electron-correlation energy (U) in the partially occupied impurity band in the condition of highly correlated electron system (U > W). Based upon first-principles calculations of K-2(S,Si) and K-2(S,Ge), we demonstrate that transparent, half-metallic and room-temperature ferromagnetic DMS could be designed even without transition metal elements. The results show that it is possible to fabricate the room-temperature ferromagnets in K2(S,Si) and K2(S,Ge) around 8 at%-impurity concentration.

引用

页码：L579 / L581

页数：3

共 22 条

[1] Ferromagnetism and its stability in the diluted magnetic semiconductor (In,Mn)As [J].