Magnetic Properties of Ultrathin γ-Fe2O3 Films Grown on Silicon Substrate

被引：4
作者：
Sun, Bai [1 ]
Li, Xiao Peng [1 ]
Zhao, Wen Xi [1 ]
Chen, Peng [1 ]
机构：
[1] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2014年 / 50卷 / 01期
基金：
美国国家科学基金会;
关键词：
Annealing temperature; magnetic properties; silicon substrate; thickness; ultrathin gamma-Fe2O3 films; PULSED-LASER DEPOSITION; OPTICAL-PROPERTIES; EPITAXIAL-FILMS; FABRICATION; DEPENDENCE;
D O I：
10.1109/TMAG.2013.2279932
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of thickness and annealing temperature on the room-temperature magnetic properties of ultrathin gamma-Fe2O3 films grown on silicon substrate were investigated. Ultrathin gamma-Fe2O3 films were grown on silicon substrates by ion beam sputtering. The saturation magnetization and coercive force of samples at room temperature increase with increasing of annealing temperature and decrease at annealing temperatures above 600 degrees C. The saturation magnetization of samples at room temperature decreases with increasing of gamma-Fe2O3 thickness. The gamma-Fe2O3 samples about 3 similar to 6 nm thick annealed at 600 degrees C show saturation magnetization of about 360 similar to 410 emu/cm(3), which is close to the bulk value of about 390 emu/cm(3) within the error range.
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页数：4
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