The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality

被引：16

作者：

Zhang, Ning ^{[1
]}

Chen, Yi ^{[1
]}

Sanchez, Edward K. ^{[2
]}

Black, David R. ^{[3
]}

Dudley, Michael ^{[1
]}

机构：

[1] SUNY Stony Brook, Dept Mat Sci & Engn, Stony Brook, NY 11794 USA

[2] Dow Corning Compound Semicond Solut, Midland, MI 48686 USA

[3] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

substrate surface scratches; basal plane dislocation; threading edge dislocation; BASAL-PLANE; DISLOCATIONS;

D O I：

10.4028/www.scientific.net/MSF.615-617.109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence Of Substrate Surface scratches oil the quality of CVD grown 4H-SiC homo-epitaxial layers has been Studied using a combination of post-growth Monochromatic Synchrotron X-ray Topography (MSXT) and KOH etching. MSXT observations suggest that the scratches on the substrate surface act as dislocation nucleation centers during the growth. When the scratch is along the off-cut direction, only TED-TED pairs are generated. As the inclination of the scratch to the off-cut direction increases, an increasing number of TED-BPD pairs are generated. A model is presented for a possible mechanism for the nucleation of dislocations at scratches.

引用

页码：109 / 112

页数：4

共 8 条

[1] Superscrew dislocation contrast on synchrotron white-beam topographs: an accurate description of the direct dislocation image [J].

Huang, XR ;

Dudley, M ;

Vetter, WM ;

Huang, W ;

Si, W ;

Carter, CH .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1999, 32 :516-524

[2]

MATSUNAMI H, 1993, PHYSICA B, V65, P185

[3] Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers [J].

Neudeck, PG ;

Huang, W ;

Dudley, M .

SOLID-STATE ELECTRONICS, 1998, 42 (12) :2157-2164

[4] Yield and fracture properties of the wide band-gap semiconductor 4H-SiC [J].

Pirouz, P ;

Zhang, M ;

Demenet, JL ;

Hobgood, HM .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (06) :3279-3290

[5] SUBLIMATION GROWTH OF SIC SINGLE-CRYSTALLINE INGOTS ON FACES PERPENDICULAR TO THE (0001) BASAL-PLANE [J].

TAKAHASHI, J ;

KANAYA, M ;

FUJIWARA, Y .

JOURNAL OF CRYSTAL GROWTH, 1994, 135 (1-2) :61-70

[6] Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching [J].

Tsuchida, H. ;

Kamata, I. ;

Nagano, M. .

JOURNAL OF CRYSTAL GROWTH, 2007, 306 (02) :254-261

[7] Why are only some basal plane dislocations converted to threading edge dislocations during SiC epitaxy? [J].

Zhang, Z. ;

Shrivastava, A. ;

Sudarshan, T. S. .

SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 :419-+

[8] Basal plane dislocation-free epitaxy of silicon carbide [J].

Zhang, Z ;

Sudarshan, TS .

APPLIED PHYSICS LETTERS, 2005, 87 (15) :1-3

← 1 →