Very high-performance dielectric properties of Ca1-3x/2YbxCu3Ti4O12 ceramics

被引：88
作者：
Boonlakhorn, Jakkree [1 ]
Thongbai, Prasit [2 ,3 ]
Putasaeng, Bundit [4 ]
Yamwong, Teerapon [4 ]
Maensiri, Santi [5 ]
机构：
[1] Khon Kaen Univ, Mat Sci & Nanotechnol Program, Fac Sci, Khon Kaen 40002, Thailand
[2] Khon Kaen Univ, Dept Phys, Fac Sci, Khon Kaen 40002, Thailand
[3] Khon Kaen Univ, INRC, Khon Kaen 40002, Thailand
[4] Natl Met & Mat Technol Ctr MTEC, Pathum Thani 12120, Thailand
[5] Suranaree Univ, Inst Sci, Sch Phys, Nakhon Ratchasima 30000, Thailand
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 612卷
关键词：
Impedance spectroscopy; Electrical conductivity; Dielectric permittivity; Loss tangent; Grain boundary; DOPED CACU3TI4O12 CERAMICS; SOL-GEL PROCESS; ELECTRICAL-PROPERTIES; Y2/3CU3TI4O12; CERAMICS; LOSS TANGENT; CONSTANT; ACU(3)TI(4)O(12); MICROSTRUCTURE; PERMITTIVITY; RESPONSES;
D O I：
10.1016/j.jallcom.2014.05.143
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Dielectric properties of Ca1-3x/2YbxCu3Ti4O12 ceramics were investigated. Grain growth of CaCu3Ti4O12 ceramics was strongly inhibited by Yb3+ doping ions, which can be ascribed to the effect of solute drag of an aliovalent Yb3+ dopant. High dielectric permittivity (epsilon' = 1.6 x 10(4)) and very low loss tangent (tan delta = 0.015) at 1 kHz with good temperature stability of epsilon' ranging from 70 to 130 degrees C (Delta epsilon' < +/- 15%) were achieved in a Ca0.925Yb0.05Cu3Ti4O12 ceramic prepared by a modified sol gel method. epsilon' was found to be nearly independent of frequency (10(2)-10(6) Hz) and dc voltage (0-40 V). Notably, the grain boundary resistances of Ca1-3x/2YbxCu3Ti4O12 ceramics at room temperature were estimated to be similar to 0.7-12.5 G Omega cm. Very high-performance dielectric properties of Ca1-3x/2YbxCu3Ti4O12 ceramics were primary attributed to their improved electrical response at grain boundaries. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：103 / 109
页数：7
相关论文
共 43 条
[1]   Influence of processing conditions on the electrical properties of CaCu3Ti4O12 ceramics [J].
Adams, T. B. ;
Sinclair, D. C. ;
West, A. R. .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2006, 89 (10) :3129-3135
[2]   Characterization of grain boundary impedances in fine- and coarse-grained CaCu3Ti4O12 ceramics -: art. no. 094124 [J].
Adams, TB ;
Sinclair, DC ;
West, AR .
PHYSICAL REVIEW B, 2006, 73 (09)
[3]   IMPURITY-DRAG EFFECT IN GRAIN BOUNDARY MOTION [J].
CAHN, JW .
ACTA METALLURGICA, 1962, 10 (SEP) :789-&
[4]   Optical response of high-dielectric-constant perovskite-related oxide [J].
Homes, CC ;
Vogt, T ;
Shapiro, SM ;
Wakimoto, S ;
Ramirez, AP .
SCIENCE, 2001, 293 (5530) :673-676
[5]   Colossal breakdown electric field and dielectric response of Al-doped CaCu3Ti4O12 ceramics [J].
Jia, Ran ;
Zhao, Xuetong ;
Li, Jianying ;
Tang, Xian .
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2014, 185 :79-85
[6]   CaCu3Ti4O12/CaTiO3 composite dielectrics:: Ba/Pb-free dielectric ceramics with high dielectric constants -: art. no. 032902 [J].
Kobayashi, W ;
Terasaki, I .
APPLIED PHYSICS LETTERS, 2005, 87 (03)
[7]   Colossal dielectric constant up to gigahertz at room temperature [J].
Krohns, S. ;
Lunkenheimer, P. ;
Kant, Ch. ;
Pronin, A. V. ;
Brom, H. B. ;
Nugroho, A. A. ;
Diantoro, M. ;
Loidl, A. .
APPLIED PHYSICS LETTERS, 2009, 94 (12)
[8]   Enhanced electric breakdown field of CaCu3Ti4O12 ceramics: tuning of grain boundary by a secondary phase [J].
Li, Jianying ;
Jia, Ran ;
Tang, Xian ;
Zhao, Xuetong ;
Li, Shengtao .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (32)
[9]   The effects of grain boundary response and electrode contact response on the dielectric properties of CaCu3Ti4O12 [J].
Li, M. ;
Zhang, D. F. ;
Wang, W. Y. ;
Wang, G. ;
Chen, X. L. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (29)
[10]   Origin(s) of the apparent high permittivity in CaCu3Ti4O12 ceramics: clarification on the contributions from internal barrier layer capacitor and sample-electrode contact effects [J].
Li, Ming ;
Shen, Zhijian ;
Nygren, Mats ;
Feteira, Antonio ;
Sinclair, Derek C. ;
West, Anthony R. .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (10)
12345