Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells

被引：34

作者：

Driscoll, Kristina ^{[1
,2
]}

Liao, Yitao ^{[1
,2
]}

Bhattacharyya, Anirban ^{[1
,2
]}

Zhou, Lin ^{[3
]}

Smith, David J. ^{[3
]}

Moustakas, Theodore D. ^{[1
,2
]}

Paiella, Roberto ^{[1
,2
]}

机构：

[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

[2] Boston Univ, Photon Ctr, Boston, MA 02215 USA

[3] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 08期

基金：

美国国家科学基金会;

关键词：

electronic structure; gallium compounds; III-V semiconductors; infrared spectra; luminescence; optical pumping; semiconductor quantum wells; wide band gap semiconductors; 1.55; MU-M; PARAMETERS; ABSORPTION; DESIGN;

D O I：

10.1063/1.3089840

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optically pumped pulsed emission of short-wave infrared radiation based on intersubband transitions in GaN/AlN quantum wells is demonstrated. Nanosecond-scale pump pulses are used to resonantly excite electrons from the ground states to the second-excited subbands, followed by radiative relaxation into the first-excited subbands. The measured room-temperature output spectra are peaked near 2 mu m with integrated powers of a few hundred nanowatts. The intersubband origin of the measured luminescence is confirmed via an extensive study of its polarization properties and pump wavelength dependence, as well as simulations of the quantum well subband structure.

引用

页数：3

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