Ultrafast carrier recombination in highly n-doped Ge-on-Si films

被引：4

作者：

Allerbeck, J. ^{[1
]}

Herbst, A. J. ^{[1
]}

Yamamoto, Y. ^{[2
]}

Capellini, G. ^{[2
,3
]}

Virgilio, M. ^{[4
]}

Brida, D. ^{[1
,5
]}

机构：

[1] Univ Konstanz, Dept Phys, D-78457 Constance, Germany

[2] IHP Leibniz Inst Innovat Mikroelekt, Technol Pk 25, D-15236 Frankfurt, Oder, Germany

[3] Univ Roma Tre, Dipartimento Sci, Vle G Marconi 446, I-00146 Rome, Italy

[4] Univ Pisa, Dipartimento Fis E Fermi, Largo Pontecorvo 3, I-56127 Pisa, Italy

[5] Univ Luxembourg, Phys & Mat Sci Res Unit, 162a Ave Faiencerie, L-1511 Luxembourg, Luxembourg

来源：

APPLIED PHYSICS LETTERS | 2019年 / 114卷 / 24期

关键词：

BAND AUGER RECOMBINATION; GERMANIUM; LIFETIME; SILICON; GAIN;

D O I：

10.1063/1.5088012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the femtosecond carrier dynamics of n-type doped and biaxially strained Ge-on-Si films which occurs upon impulsive photoexcitation by means of broadband near-IR transient absorption spectroscopy. The modeling of the experimental data takes into account the static donor density in a modified rate equation for the description of the temporal recombination dynamics. The measurements confirm the negligible contribution at a high n-type doping concentration, in the 10(19)cm(-3) range, of Auger processes as compared to defect-related Shockley-Read-Hall recombination. Energy resolved dynamics reveal further insights into the doping-related band structure changes and suggest a reshaping of direct and indirect conduction band valleys to a single effective valley along with a significant spectral broadening of the optical transitions.

引用

页数：5

共 37 条

[1]

[Anonymous], 1995, PHYS REV A, V52, pR2493, DOI DOI 10.1103/PhysRevB.52.R11584

[2]

[Anonymous], 2012, P NATL ACAD SCI USA, V109, pE1377, DOI DOI 10.1103/PhysRevLett.109.057402

[3]

[Anonymous], 2014, AM J PUBLIC HLTH S3, V104, pS251, DOI DOI 10.1063/1.4865237

[4]

[Anonymous], 2013, ACTA PAEDIATR, V102, pe164, DOI DOI 10.1063/1.4802199

[5] Low-threshold optically pumped lasing in highly strained germanium nanowires [J].

Bao, Shuyu ;

Kim, Daeik ;

Onwukaeme, Chibuzo ;

Gupta, Shashank ;

Saraswat, Krishna ;

Lee, Kwang Hong ;

Kim, Yeji ;

Min, Dabin ;

Jung, Yongduck ;

Qiu, Haodong ;

Wang, Hong ;

Fitzgerald, Eugene A. ;

Tan, Chuan Seng ;

Nam, Donguk .

NATURE COMMUNICATIONS, 2017, 8

[6] The impact of donors on recombination mechanisms in heavily doped Ge/Si layers [J].

Barget, Michael R. ;

Virgilio, Michele ;

Capellini, Giovanni ;

Yamamoto, Yuji ;

Schroeder, Thomas .

JOURNAL OF APPLIED PHYSICS, 2017, 121 (24)

[7] Recent advances in germanium emission [Invited] [J].

Boucaud, P. ;

El Kurdi, M. ;

Ghrib, A. ;

Prost, M. ;

de Kersauson, M. ;

Sauvage, S. ;

Aniel, F. ;

Checoury, X. ;

Beaudoin, G. ;

Largeau, L. ;

Sagnes, I. ;

Ndong, G. ;

Chaigneau, M. ;

Ossikovski, R. .

PHOTONICS RESEARCH, 2013, 1 (03) :102-109

[8] Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metaloxide-semiconductor process [J].

Capellini, G. ;

Reich, C. ;

Guha, S. ;

Yamamoto, Y. ;

Lisker, M. ;

Virgilio, M. ;

Ghrib, A. ;

El Kurdi, M. ;

Boucaud, P. ;

Tillack, B. ;

Schroeder, T. .

OPTICS EXPRESS, 2014, 22 (01) :399-410

[9] MINORITY CARRIER LIFETIME IN HIGHLY DOPED GE [J].

CONRADT, R ;

AENGENHEISTER, J .

SOLID STATE COMMUNICATIONS, 1972, 10 (03) :321-+

[10] Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium [J].

Dominici, Stefano ;

Wen, Hanqing ;

Bertazzi, Francesco ;

Goano, Michele ;

Bellotti, Enrico .

APPLIED PHYSICS LETTERS, 2016, 108 (21)

← 1 2 3 4 →