Preparation and characterization of Cd2Nb2O7 thin films on Si substrates

被引：5

作者：

Ronconi, Celia M. ^{[2
]}

Goncalves, Debora ^{[1
]}

Suvorova, Nathalia ^{[3
]}

Alves, Oswaldo L. ^{[4
]}

Irene, Eugene A. ^{[3
]}

机构：

[1] Univ Sao Paulo, Inst Fis, BR-13560970 Sao Carlos, SP, Brazil

[2] Univ Fed Rio de Janeiro, Inst Quim, BR-21941909 Rio De Janeiro, Brazil

[3] Univ N Carolina, Dept Chem, Chapel Hill, NC 27599 USA

[4] Univ Estadual Campinas, Inst Quim, BR-13084862 Campinas, SP, Brazil

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2009年 / 70卷 / 01期

基金：

美国国家科学基金会; 巴西圣保罗研究基金会;

关键词：

Ceramics; Nanostructures; Oxides; Thin films; Dielectric properties; METALLOORGANIC DECOMPOSITION; FERROELECTRIC CD2NB2O7; PHASE-TRANSITIONS; COMPOUND;

D O I：

10.1016/j.jpcs.2008.10.006

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Thin Cd2Nb2O7 films were grown on single-crystal p-type SiO2/Si substrates by the metallo-organic decomposition (MOD) technique. The films were investigated by X-ray diffraction, X-ray energy-dispersive spectroscopy, and field emission scanning electron microscopy, and showed a single phase (cubic pyrochlore), a crack-free spherical grain structure, and nanoparticles with a mean size of about 68 nm. A Cauchy model was also used in order to obtain the thickness and index of refraction of the stack layers (transparent layer/SiO2/Si) by spectroscopic ellipsometry (SE). The dielectric constant (K) of the films was calculated to be about 25 from the capacitance-voltage (C-V) measurements. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：234 / 237

页数：4

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