Preparation and characterization of Cd2Nb2O7 thin films on Si substrates

被引：5
作者：
Ronconi, Celia M. [2 ]
Goncalves, Debora [1 ]
Suvorova, Nathalia [3 ]
Alves, Oswaldo L. [4 ]
Irene, Eugene A. [3 ]
机构：
[1] Univ Sao Paulo, Inst Fis, BR-13560970 Sao Carlos, SP, Brazil
[2] Univ Fed Rio de Janeiro, Inst Quim, BR-21941909 Rio De Janeiro, Brazil
[3] Univ N Carolina, Dept Chem, Chapel Hill, NC 27599 USA
[4] Univ Estadual Campinas, Inst Quim, BR-13084862 Campinas, SP, Brazil
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2009年 / 70卷 / 01期
基金：
美国国家科学基金会; 巴西圣保罗研究基金会;
关键词：
Ceramics; Nanostructures; Oxides; Thin films; Dielectric properties; METALLOORGANIC DECOMPOSITION; FERROELECTRIC CD2NB2O7; PHASE-TRANSITIONS; COMPOUND;
D O I：
10.1016/j.jpcs.2008.10.006
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Thin Cd2Nb2O7 films were grown on single-crystal p-type SiO2/Si substrates by the metallo-organic decomposition (MOD) technique. The films were investigated by X-ray diffraction, X-ray energy-dispersive spectroscopy, and field emission scanning electron microscopy, and showed a single phase (cubic pyrochlore), a crack-free spherical grain structure, and nanoparticles with a mean size of about 68 nm. A Cauchy model was also used in order to obtain the thickness and index of refraction of the stack layers (transparent layer/SiO2/Si) by spectroscopic ellipsometry (SE). The dielectric constant (K) of the films was calculated to be about 25 from the capacitance-voltage (C-V) measurements. (c) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：234 / 237
页数：4
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