High-Performance Low-Cost Back-Channel-Etch Amorphous Gallium-Indium-Zinc Oxide Thin-Film Transistors by Curing and Passivation of the Damaged Back Channel

被引：34

作者：

Park, Jae Chul ^{[1
]}

Ahn, Seung-Eon ^{[2
]}

Lee, Ho-Nyeon ^{[3
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, South Korea

[3] Soonchunhyang Univ, Dept Display & Elect Informat Engn, Asan 336745, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2013年 / 5卷 / 23期

关键词：

annealing; back-channel etch; field-effect transistor; gallium-indium-zinc oxide; N2O plasma; passivation; SEMICONDUCTOR; INSTABILITIES; PRESSURE; MOBILITY; STOPPER; STRESS; METAL;

D O I：

10.1021/am404490t

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High-performance, low-cost amorphous gallium indium-zinc-oxide (a-GIZO) thin-film-transistor (TFT) technology is required for the next generation of active-matrix organic light-emitting diodes. A back-channel-etch structure is the most appropriate device structure for high-performance, low-cost a-GIZO TFT technology. However, channel damage due to source/drain etching and passivation-layer deposition has been a critical issue. To solve this problem, the present work focuses on overall back-channel processes, such as back-channel N2O plasma treatment, SiOx passivation deposition, and final thermal annealing. This work has revealed the dependence of a-GIZO TFT characteristics on the N2O plasma radio-frequency (RF) power and frequency, the SiH4 flow rate in the SiOx deposition process, and the final annealing temperature. On the basis of these results, a high-performance a-GIZO TFT with a field-effect mobility of 35.7 cm(2) V-1 s(-1), a subthreshold swing of 185 mV dec(-1), a switching ratio exceeding 10(7), and a satisfactory reliability was successfully fabricated. The technology developed in this work can be realized using the existing facilities of active-matrix liquid-crystal display industries.

引用

页码：12262 / 12267

页数：6

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