Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell

被引：7

作者：

El Moukhtari, I. ^{[1
]}

Pouget, V. ^{[2
]}

Larue, C. ^{[3
]}

Darracq, F. ^{[1
]}

Lewis, D. ^{[1
]}

Perdu, P. ^{[4
]}

机构：

[1] Univ Bordeaux 1, IMS, F-33405 Talence, France

[2] Univ Montpellier 2, IES, F-34095 Montpellier, France

[3] PULSCAN, F-33170 Gradignan, France

[4] CNES 23, F-31400 Toulouse, France

来源：

MICROELECTRONICS RELIABILITY | 2013年 / 53卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2013.07.129

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents experimental characterization of the impact of negative bias temperature instability on the single-event upset sensitivity of SRAM cells embedded in a 65 nm CMOS test vehicle. Pre and post-aging SEU threshold laser energy measurements indicate that the cells sensitivity increases over time. The results are confirmed by electrical simulation and the consequences in terms of SEU rate prediction are discussed. (C) 2013 Published by Elsevier Ltd.

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收藏

页码：1325 / 1328

页数：4

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