Short Notice: Metal-insulator transition in single crystals Y1-zPrzBa2Cu3O7-d

被引:0
作者
Khadzhai, G. Ya. [1 ]
Solovjov, A. L. [1 ,2 ,4 ]
Panchenko, N. G. [3 ]
Vovk, M. R. [1 ]
Vovk, R. V. [1 ,3 ]
机构
[1] Kharkov Natl Univ, Kharkiv, Ukraine
[2] Natl Acad Sci Ukraine, BI Verkin Inst Low Temp Phys & Engn, Kiev, Ukraine
[3] Ukrainian State Univ Railway Transport, Kharkiv, Ukraine
[4] Polish Acad Sci Wroclaw, Inst Low Temp & Struct Res, PL-50950 Wroclaw, Poland
关键词
high-temperature superconductivity; metal-insulator transition; doping; PSEUDO-GAP STATE; EXCESS CONDUCTIVITY; COMPOUNDS R=Y; PRASEODYMIUM; SUPERCONDUCTIVITY; ANISOTROPY; SYSTEM; PARACONDUCTIVITY; TEMPERATURE; TRANSPORT;
D O I
10.1063/10.0011607
中图分类号
O59 [应用物理学];
学科分类号
摘要
The aim was to conduct comparative studies of the evolution of conductivity along and across the base ab plane in Y 1 - z P r z B a 2 C u 3 O 7 - delta single crystals at different degrees of praseodymium doping in a wide range of concentrations 0 & LE; z & LE; 0.5. It is established that the increase in the degree of praseodymium doping in samples Y 1 - z P r z B a 2 C u 3 O 7 - delta leads to increased effects of localization and implementation in the system of metal-insulator type transition, which always precedes the superconducting transition. Increasing the concentration of praseodymium leads to a significant shift in the beginning of the metal-insulator transition at the low temperature region. Published under an exclusive license by AIP Publishing.
引用
收藏
页码:576 / 579
页数:4
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