Photon-assisted multiple-Andreev reflections in high-Jc NbN/AlN/NbN tunnel junctions

被引：1
作者：
Okanoue, K
Ishida, H
Hamasaki, K
Kawakami, A
Wang, Z
机构：
[1] Nagaoka Univ Technol, Dept Engn, Nagaoka, Niigata 9402188, Japan
[2] KARC Commun Res Lab, Nishi Ku, Kobe, Hyogo 6512492, Japan
来源：
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2004年 / 412卷
关键词：
superconducting tunnel junction; multiple-Andreev reflection; photon-assisted Andreev current;
D O I：
10.1016/j.physc.2004.02.228
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Interplay between microwave field and Andreev current in epitaxial NbN/AlN/NbN tunnel junctions have been investigated. The subharmonic-gap structures (dV/dI dip-structures) were clearly observed for almost all junctions without microwave field, and the voltage positions of dV/dI dips were well explained by Octavio, Tinkham, Blonder and Klapwijk (OTBK) theory based on multiple-Andreev reflection (MAR). In the presence of microwave field, the dV/dI-V curve only in a high-J(c) (5 kA/cm(2)) junction has a rich subgap structure due to photon-assisted MAR. The observed microwave-induced dV/dI structure was qualitatively explained by the OTBK theory with an effective time-dependent voltage model. (C) 2004 Published by Elsevier B.V.
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页码：1463 / 1467
页数：5
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