Sponge-like and columnar porous silicon implanted with nitrogen by plasma immersion ion implantation (PIII)

被引：5

作者：

Beloto, AF

Ueda, M

Abramof, E

Senna, JR

da Silva, MD

Kuranaga, C

Reuther, H

da Silva, AF

Pepe, I

机构：

[1] Inst Nacl Pesquisas Espaciais, Lab Associado Mat & Sensores, LAS, BR-12201970 Sao Jose Dos Campos, SP, Brazil

[2] Inst Nacl Pesquisas Espaciais, LAP, BR-12201970 Sao Jose Dos Campos, SP, Brazil

[3] Inst Ion Beam Phys & Mat Res, Res Ctr Rossendorf, Dresden, Germany

[4] Univ Fed Bahia, Inst Fis, BR-40210340 Salvador, BA, Brazil

来源：

SURFACE & COATINGS TECHNOLOGY | 2002年 / 156卷 / 1-3期

关键词：

porous silicon; plasma immersion ion implantation (PIII); reflectance;

D O I：

10.1016/S0257-8972(02)00106-8

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Sponge-like and columnar porous silicon (PS) were prepared from p- and n-type (100) monocrystalline silicon wafers using different anodization conditions (hydrofluoric acid concentration, current density and anodization time) and then implanted with nitrogen by plasma immersion ion implantation (PIII). The effect of the implantation and of the compounds formed was analyzed by measuring the reflectance of the implanted samples for wavelengths between 220 and 800 nm. A reduction in reflectance in the ultraviolet (UV) region of the spectrum was observed for polished Si samples and for all kinds of PS samples. Increased UV-induced photoluminescence in these samples caused by the increase in absorption in the UV region is expected. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：267 / 271

页数：5

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