Structural and optical properties of β-Ga2O3 films deposited on MgAl2O4 (100) substrates by metal-organic chemical vapor deposition

beta-Ga2O3 films have been prepared on MgAl2O4 (1 0 0) substrates at different temperatures (550-700 degrees C) by metal-organic chemical vapor deposition (MOCVD). Microstructure analysis revealed that the sample deposited at 650 degrees C was the single crystal epitaxial film with the best crystallinities. The epitaxial relationship was beta-Ga2O3 (1 0 0) parallel to MgAl2O4 (1 0 0) with beta-Ga2O3 [0 0 1] parallel to MgAl2O4 < 0 1 1 >. A schematic diagram was proposed to explain the domain structure in the film layer. The average transmittance for the films in the visible range was over 90%. An ultraviolet (UV)-green photoluminescence (PL) from about 350-600 nm was observed at room temperature (RT). The corresponding PL mechanisms were investigated. (C) 2013 Elsevier B.V. All rights reserved.