Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals

被引：5

作者：

Lee, Jong Hyun ^{[1
]}

Lee, Jun Seok ^{[1
]}

Cha, Seung Nam ^{[2
]}

Kim, Jong Min ^{[2
]}

Seo, Do Seok ^{[3
]}

Bin Im, Won ^{[3
]}

Hong, Jin Pyo ^{[1
]}

机构：

[1] Hanyang Univ, Dept Phys, Novel Funct Mat & Device Lab, Seoul 133791, South Korea

[2] Samsung Adv Inst Technol, Suwon 440600, South Korea

[3] WONIL Image Maker INC, Shihung 429450, South Korea

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 14期

关键词：

ZnO; Aluminium-nitride codoped; p-type; Homojunction; OPTICAL-PROPERTIES;

D O I：

10.1016/j.tsf.2009.01.171

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High mobility p-type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz-tube located inside the chamber during co-sputtering process. The AlN codoped ZnO film shows excellent p-type behavior with a high mobility and a hole concentration of 154 cm(2.)V(-1)s(-1) and about 3 x 10(18.) cm(-3) at 600 degrees C, respectively. Electrical properties of p-n homo-junction devices based on p-type ZnO film are also discussed. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：3950 / 3953

页数：4

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